Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82172
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dc.contributor.authorGu, Enyaoen
dc.contributor.authorHu, Guangxien
dc.contributor.authorXiang, Pingen
dc.contributor.authorLiu, Ranen
dc.contributor.authorWang, Linglien
dc.contributor.authorZhou, Xingen
dc.date.accessioned2016-08-16T06:40:42Zen
dc.date.accessioned2019-12-06T14:47:58Z-
dc.date.available2016-08-16T06:40:42Zen
dc.date.available2019-12-06T14:47:58Z-
dc.date.issued2014en
dc.identifier.citationXiang, P., Gu, E., Hu, G., Liu, R., Wang, L., & Zhou, X. (2014). Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs. Far East Journal of Electronics and Communications, 12(1), 39-48.en
dc.identifier.issn0973-7006en
dc.identifier.urihttps://hdl.handle.net/10356/82172-
dc.description.abstractAn analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain current and subthreshold swing make the model suitable to be embedded in circuit simulation and design tools.en
dc.format.extent10 p.en
dc.language.isoenen
dc.relation.ispartofseriesFar East Journal of Electronics and Communicationsen
dc.rights© 2014 Pushpa Publishing House. This paper was published in Far East Journal of Electronics and Communications and is made available as an electronic reprint (preprint) with permission of Pushpa Publishing House. The published version is available at: [http://www.pphmj.com/abstract/8431.htm]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectsemiconductoren
dc.subjectanalyticalen
dc.titleAnalytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.description.versionPublished versionen
dc.identifier.urlhttp://www.pphmj.com/abstract/8431.htmen
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