Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82172
Title: Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs
Authors: Gu, Enyao
Hu, Guangxi
Xiang, Ping
Liu, Ran
Wang, Lingli
Zhou, Xing
Keywords: semiconductor
analytical
Issue Date: 2014
Source: Xiang, P., Gu, E., Hu, G., Liu, R., Wang, L., & Zhou, X. (2014). Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs. Far East Journal of Electronics and Communications, 12(1), 39-48.
Series/Report no.: Far East Journal of Electronics and Communications
Abstract: An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain current and subthreshold swing make the model suitable to be embedded in circuit simulation and design tools.
URI: https://hdl.handle.net/10356/82172
http://hdl.handle.net/10220/41136
ISSN: 0973-7006
Rights: © 2014 Pushpa Publishing House. This paper was published in Far East Journal of Electronics and Communications and is made available as an electronic reprint (preprint) with permission of Pushpa Publishing House. The published version is available at: [http://www.pphmj.com/abstract/8431.htm]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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