Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82315
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dc.contributor.authorFook, Hiu Tungen
dc.contributor.authorGan, Wei Liangen
dc.contributor.authorLew, Wen Siangen
dc.date.accessioned2018-11-13T02:43:14Zen
dc.date.accessioned2019-12-06T14:53:09Z-
dc.date.available2018-11-13T02:43:14Zen
dc.date.available2019-12-06T14:53:09Z-
dc.date.issued2016en
dc.identifier.citationFook, H. T., Gan, W. L., & Lew, W. S. (2016). Gateable skyrmion transport via field-induced potential barrier modulation. Scientific Reports, 6, 21099-. doi:10.1038/srep21099en
dc.identifier.urihttps://hdl.handle.net/10356/82315-
dc.description.abstractWe report on the influence of pinning potentials on current-driven skyrmion dynamics and demonstrate that skyrmions can be gated via either magnetic or electric fields. When encountering pinning potentials, skyrmions are well known to simply skirt around them. However, we show that skyrmions can be depinned much more easily when their driving force is oriented against the pinning site rather that the intuitive option of being oriented away. This observation can be exploited together with the normally undesirable Magnus force for the creation of a skyrmion diode. The phenomenon is explained by the increased skyrmion compression resulting from the spin transfer torque opposing the repulsive potential. The smaller skyrmion size then experiences a reduced pinning potential. For practical low-power device applications, we show that the same skyrmion compression can be recreated by applying either a magnetic or electric field. Our analysis provides an insight on the skyrmion dynamics and manipulation that is critical for the realization of skyrmion-based transistors and low-power memory.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent8 p.en
dc.language.isoenen
dc.relation.ispartofseriesScientific Reportsen
dc.rights© 2016 The Authors (Nature Publishing Group). This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.subjectDRNTU::Science::Physicsen
dc.subjectMagnetic Skyrmionsen
dc.subjectComputational nanotechnologyen
dc.titleGateable skyrmion transport via field-induced potential barrier modulationen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1038/srep21099en
dc.description.versionPublished versionen
dc.identifier.pmid26883575-
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