Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82335
Title: On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
Authors: Kyaw, Zabu
Zhang, Zi-Hui
Liu, Wei
Tan, Swee Tiam
Ju, Zhen Gang
Zhang, Xue Liang
Ji, Yun
Hasanov, Namig
Zhu, Binbin
Lu, Shunpeng
Zhang, Yiping
Sun, Xiao Wei
Demir, Hilmi Volkan
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2014
Source: Kyaw, Z., Zhang, Z.- H., Liu, W., Tan, S. T., Ju, Z. G., Zhang, X. L., et al. (2014). On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes. Optics Express, 22(1), 809-816.
Series/Report no.: Optics express
Abstract: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.
URI: https://hdl.handle.net/10356/82335
http://hdl.handle.net/10220/18801
ISSN: 1094-4087
DOI: 10.1364/OE.22.000809
Rights: © 2014 Optical Society of America.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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