Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82336
Title: On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
Authors: Zhang, Xueliang
Kyaw, Zabu
Zhang, Zi-Hui
Liu, Wei
Tan, Swee Tiam
Ju, Zhengang
Ji, Yun
Hasanov, Namig
Zhu, Binbin
Lu, Shunpeng
Zhang, Yiping
Sun, Xiao Wei
Demir, Hilmi Volkan
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Zhang, Z. H., Liu, W., Tan, S. T., Ju, Z., Ji, Y., Kyaw, Z., et al. (2014). On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes. Optics Express, 22(S3), A779-A789.
Series/Report no.: Optics express
Abstract: Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs.
URI: https://hdl.handle.net/10356/82336
http://hdl.handle.net/10220/19577
ISSN: 1094-4087
DOI: 10.1364/OE.22.00A779
Rights: © 2014 Optical Society of America.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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