Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82373
Title: An Epitaxial Ferroelectric Tunnel Junction on Silicon
Authors: Li, Zhipeng
Guo, Xiao
Lu, Hui-Bin
Zhang, Zaoli
Song, Dongsheng
Cheng, Shaobo
Bosman, Michel
Zhu, Jing
Dong, Zhili
Zhu, Weiguang
Keywords: Ferroelectric tunnel junction
Non-volatile memory
Tunneling electroresistance
Epitaxial growth
Pulsed laser deposition
Issue Date: 2014
Source: Li, Z., Guo, X., Lu, H. B., Zhang, Z., Song, D., Cheng, S., Bosman, M., Zhu, J., Dong, Z.,& Zhu, W. (2014). An Epitaxial Ferroelectric Tunnel Junction on Silicon. Advanced Materials, 26(42), 7185-7189.
Series/Report no.: Advanced Materials
Abstract: Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.
URI: https://hdl.handle.net/10356/82373
http://hdl.handle.net/10220/39930
ISSN: 0935-9648
DOI: 10.1002/adma.201402527
Rights: © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.