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Title: An Epitaxial Ferroelectric Tunnel Junction on Silicon
Authors: Li, Zhipeng
Guo, Xiao
Lu, Hui-Bin
Zhang, Zaoli
Song, Dongsheng
Cheng, Shaobo
Bosman, Michel
Zhu, Jing
Dong, Zhili
Zhu, Weiguang
Keywords: Ferroelectric tunnel junction
Non-volatile memory
Tunneling electroresistance
Epitaxial growth
Pulsed laser deposition
Issue Date: 2014
Source: Li, Z., Guo, X., Lu, H. B., Zhang, Z., Song, D., Cheng, S., Bosman, M., Zhu, J., Dong, Z.,& Zhu, W. (2014). An Epitaxial Ferroelectric Tunnel Junction on Silicon. Advanced Materials, 26(42), 7185-7189.
Series/Report no.: Advanced Materials
Abstract: Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.
ISSN: 0935-9648
DOI: 10.1002/adma.201402527
Schools: School of Electrical and Electronic Engineering 
School of Materials Science & Engineering 
Rights: © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Fulltext Permission: none
Fulltext Availability: No Fulltext
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