Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82405
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dc.contributor.authorOkada, Atsushien
dc.contributor.authorHe, Shikunen
dc.contributor.authorGu, Boen
dc.contributor.authorKanai, Shunen
dc.contributor.authorSoumyanarayanan, Anjanen
dc.contributor.authorLim, Sze Teren
dc.contributor.authorTran, Michaelen
dc.contributor.authorMori, Michiyasuen
dc.contributor.authorMaekawa, Sadamichien
dc.contributor.authorMatsukura, Fumihiroen
dc.contributor.authorOhno, Hideoen
dc.contributor.authorPanagopoulos, Christosen
dc.date.accessioned2017-08-03T04:36:10Zen
dc.date.accessioned2019-12-06T14:54:59Z-
dc.date.available2017-08-03T04:36:10Zen
dc.date.available2019-12-06T14:54:59Z-
dc.date.issued2017en
dc.identifier.citationOkada, A., He, S., Gu, B., Kanai, S., Soumyanarayanan, A., Lim, S. T., et al. (2017). Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy. Proceedings of the National Academy of Sciences of the United States of America, 114(15), 3815-3820.en
dc.identifier.issn0027-8424en
dc.identifier.urihttps://hdl.handle.net/10356/82405-
dc.description.abstractStudies of magnetization dynamics have incessantly facilitated the discovery of fundamentally novel physical phenomena, making steady headway in the development of magnetic and spintronics devices. The dynamics can be induced and detected electrically, offering new functionalities in advanced electronics at the nanoscale. However, its scattering mechanism is still disputed. Understanding the mechanism in thin films is especially important, because most spintronics devices are made from stacks of multilayers with nanometer thickness. The stacks are known to possess interfacial magnetic anisotropy, a central property for applications, whose influence on the dynamics remains unknown. Here, we investigate the impact of interfacial anisotropy by adopting CoFeB/MgO as a model system. Through systematic and complementary measurements of ferromagnetic resonance (FMR) on a series of thin films, we identify narrower FMR linewidths at higher temperatures. We explicitly rule out the temperature dependence of intrinsic damping as a possible cause, and it is also not expected from existing extrinsic scattering mechanisms for ferromagnets. We ascribe this observation to motional narrowing, an old concept so far neglected in the analyses of FMR spectra. The effect is confirmed to originate from interfacial anisotropy, impacting the practical technology of spin-based nanodevices up to room temperature.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.format.extent23 p.en
dc.language.isoenen
dc.relation.ispartofseriesProceedings of the National Academy of Sciences of the United States of Americaen
dc.rights© 2017 The author(s) (published by National Academy of Sciences). This is the author created version of a work that has been peer reviewed and accepted for publication in Proceedings of the National Academy of Sciences of the United States of America, published by National Academy of Sciences on behalf of the author(s). It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document.  The published version is available at: [http://dx.doi.org/10.1073/pnas.1613864114].en
dc.subjectCoFeB/MgOen
dc.subjectFerromagnetic resonanceen
dc.titleMagnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropyen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1073/pnas.1613864114en
dc.description.versionAccepted versionen
item.grantfulltextopen-
item.fulltextWith Fulltext-
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