Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82422
Title: Ferroelectricity emerging in strained (111)-textured ZrO2 thin films
Authors: Fan, Zhen
Deng, Jinyu
Wang, Jingxian
Liu, Ziyan
Yang, Ping
Xiao, Juanxiu
Yan, Xiaobing
Dong, Zhili
Wang, John
Chen, Jingsheng
Keywords: Ferroelectric thin films
Issue Date: 2016
Source: Fan, Z., Deng, J., Wang, J., Liu, Z., Yang, P., Xiao, J., et al. (2016). Ferroelectricity emerging in strained (111)-textured ZrO2 thin films. Applied Physics Letters, 108(1), 012906-.
Series/Report no.: Applied Physics Letters
Abstract: (Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO2thin films. Our theoretical analyses suggest that the strain imposed on the ZrO2 (111) film by the TiN/MgO (001) substrate would energetically favor the tetragonal (t) and orthorhombic (o) phases over the monoclinic (m) phase of ZrO2, and the compressive strain along certain ⟨11-2⟩ directions may further stabilize the o-phase. Experimentally ZrO2thin films are sputtered onto the MgO (001) substrates buffered by epitaxial TiN layers. ZrO2thin films exhibit t- and o-phases, which are highly (111)-textured and strained, as evidenced by X-ray diffraction and transmission electron microscopy. Both polarization-electric field (P-E) loops and corresponding current responses to voltage stimulations measured with appropriate applied fields reveal the ferroelectric sub-loop behavior of the ZrO2films at certain thicknesses, confirming that the ferroelectric o-phase has been developed in the strained (111)-textured ZrO2films. However, further increasing the applied field leads to the disappearance of ferroelectric hysteresis, the possible reasons of which are discussed.
URI: https://hdl.handle.net/10356/82422
http://hdl.handle.net/10220/40010
ISSN: 0003-6951
DOI: 10.1063/1.4939660
Rights: © 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4939660]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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