Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82433
Title: An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells
Authors: Chua, Rou Hua
Li, Xianglin
Walter, Thomas
Teh, Lay Kuan
Hahn, Thomas
Hergert, Frank
Mhaisalkar, Subodh
Wong, Lydia Helena
Keywords: Photoluminescence
Issue Date: 2016
Source: Chua, R. H., Li, X., Walter, T., Teh, L. K., Hahn, T., Hergert, F., Mhaisalkar, S., et al. (2016). An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells. Applied Physics Letters, 108(4), 043505-.
Series/Report no.: Applied Physics Letters
Abstract: Zinc oxysulfide buffer layers with [O]:[S] of 1:0, 6:1, 4:1, 2:1, and 1:1 ratios were deposited by atomic layer deposition on Cu(In,Ga)(S,Se)2 absorbers and made into finished solar cells. We demonstrate using Time-Resolved Photoluminescence that the minority carrier lifetime of Zn(O,S) buffered solar cells is dependent on the sulfur content of the buffer layer.τ1 for devices with [O]:[S] of 1:0–4:1 are <10 ns, indicating efficient charge separation in devices with low sulfur content. An additional τ2 is observed for relaxed devices with [O]:[S] of 2:1 and both relaxed and light soaked devices with [O]:[S] of 1:1. Corroborated with one-dimensional electronic band structure simulation results, we attribute this additional decay lifetime to radiative recombination in the absorber due to excessive acceptor-type defects in sulfur-rich Zn(O,S) buffer layer that causes a buildup in interface-barrier for charge transport. A light soaking step shortens the carrier lifetime for the moderately sulfur-rich 2:1 device when excess acceptors are passivated in the buffer, reducing the crossover in the dark and illuminated I-V curves. However, when a high concentration of excess acceptors exist in the buffer and cannot be passivated by light soaking, as with the sulfur-rich 1:1 device, then cell efficiency of the device will remain low.
URI: https://hdl.handle.net/10356/82433
http://hdl.handle.net/10220/40013
ISSN: 0003-6951
DOI: 10.1063/1.4940913
Rights: © 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4940913]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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