Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82433
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dc.contributor.authorChua, Rou Huaen
dc.contributor.authorLi, Xianglinen
dc.contributor.authorWalter, Thomasen
dc.contributor.authorTeh, Lay Kuanen
dc.contributor.authorHahn, Thomasen
dc.contributor.authorHergert, Franken
dc.contributor.authorMhaisalkar, Subodhen
dc.contributor.authorWong, Lydia Helenaen
dc.date.accessioned2016-02-19T07:10:37Zen
dc.date.accessioned2019-12-06T14:55:31Z-
dc.date.available2016-02-19T07:10:37Zen
dc.date.available2019-12-06T14:55:31Z-
dc.date.issued2016en
dc.identifier.citationChua, R. H., Li, X., Walter, T., Teh, L. K., Hahn, T., Hergert, F., Mhaisalkar, S., et al. (2016). An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells. Applied Physics Letters, 108(4), 043505-.en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/82433-
dc.description.abstractZinc oxysulfide buffer layers with [O]:[S] of 1:0, 6:1, 4:1, 2:1, and 1:1 ratios were deposited by atomic layer deposition on Cu(In,Ga)(S,Se)2 absorbers and made into finished solar cells. We demonstrate using Time-Resolved Photoluminescence that the minority carrier lifetime of Zn(O,S) buffered solar cells is dependent on the sulfur content of the buffer layer.τ1 for devices with [O]:[S] of 1:0–4:1 are <10 ns, indicating efficient charge separation in devices with low sulfur content. An additional τ2 is observed for relaxed devices with [O]:[S] of 2:1 and both relaxed and light soaked devices with [O]:[S] of 1:1. Corroborated with one-dimensional electronic band structure simulation results, we attribute this additional decay lifetime to radiative recombination in the absorber due to excessive acceptor-type defects in sulfur-rich Zn(O,S) buffer layer that causes a buildup in interface-barrier for charge transport. A light soaking step shortens the carrier lifetime for the moderately sulfur-rich 2:1 device when excess acceptors are passivated in the buffer, reducing the crossover in the dark and illuminated I-V curves. However, when a high concentration of excess acceptors exist in the buffer and cannot be passivated by light soaking, as with the sulfur-rich 1:1 device, then cell efficiency of the device will remain low.en
dc.description.sponsorshipEDB (Economic Devt. Board, S’pore)en
dc.format.extent5 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.rights© 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4940913]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectPhotoluminescenceen
dc.titleAn experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cellsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.researchEnergy Research Institute @ NTU (ERI@N)en
dc.identifier.doi10.1063/1.4940913en
dc.description.versionPublished versionen
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