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|Title:||A silicon-nanowire memory driven by optical gradient force induced bistability||Authors:||Yang, Z. C.
Gu, Y. D.
Ng, Geok Ing
Kwong, D. L.
Chin, Lip Ket
Liu, Ai Qun
|Keywords:||Optical resonators||Issue Date:||2015||Source:||Dong, B., Cai, H., Chin, L. K., Huang, J. G., Yang, Z. C., Gu, Y. D., et al. (2015). A silicon-nanowire memory driven by optical gradient force induced bistability. Applied Physics Letters, 107(26), 261111-.||Series/Report no.:||Applied Physics Letters||Abstract:||In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.||URI:||https://hdl.handle.net/10356/82448
|ISSN:||0003-6951||DOI:||10.1063/1.4939114||Schools:||School of Electrical and Electronic Engineering||Rights:||© 2015 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4939114]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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