Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82448
Title: A silicon-nanowire memory driven by optical gradient force induced bistability
Authors: Yang, Z. C.
Gu, Y. D.
Ng, Geok Ing
Ser, Wee
Kwong, D. L.
Dong, Bin
Cai, H.
Chin, Lip Ket
Huang, Jianguo
Liu, Ai Qun
Keywords: Optical resonators
Issue Date: 2015
Source: Dong, B., Cai, H., Chin, L. K., Huang, J. G., Yang, Z. C., Gu, Y. D., et al. (2015). A silicon-nanowire memory driven by optical gradient force induced bistability. Applied Physics Letters, 107(26), 261111-.
Series/Report no.: Applied Physics Letters
Abstract: In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.
URI: https://hdl.handle.net/10356/82448
http://hdl.handle.net/10220/40015
ISSN: 0003-6951
DOI: 10.1063/1.4939114
Rights: © 2015 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4939114]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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