Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82610
Title: Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer
Authors: Yu, Peng
Lin, Junhao
Sun, Linfeng
Le, Quang Luan
Yu, Xuechao
Gao, Guanhui
Hsu, Chuang-Han
Wu, Di
Chang, Tay-Rong
Zeng, Qingsheng
Liu, Fucai
Wang, Qi Jie
Jeng, Horng-Tay
Lin, Hsin
Trampert, Achim
Shen, Zexiang
Suenaga, Kazu
Liu, Zheng
Keywords: 2D materials
Band gap
Issue Date: 2016
Source: Yu, P., Lin, J., Sun, L., Le, Q. L., Yu, X., & Gao, G. (2016). Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer. Advanced Materials, 29(4), 1603991-.
Series/Report no.: Advanced Materials
Abstract: A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1−x)Te2x, where x equals 0% –100%). The optical bandgaps of the WSe2(1−x)Te2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.
Description: 22 p.
URI: https://hdl.handle.net/10356/82610
http://hdl.handle.net/10220/42354
ISSN: 0935-9648
DOI: 10.1002/adma.201603991
Rights: © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adma.201603991].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles
SPMS Journal Articles

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