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https://hdl.handle.net/10356/82610
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DC Field | Value | Language |
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dc.contributor.author | Yu, Peng | en |
dc.contributor.author | Lin, Junhao | en |
dc.contributor.author | Sun, Linfeng | en |
dc.contributor.author | Le, Quang Luan | en |
dc.contributor.author | Yu, Xuechao | en |
dc.contributor.author | Gao, Guanhui | en |
dc.contributor.author | Hsu, Chuang-Han | en |
dc.contributor.author | Wu, Di | en |
dc.contributor.author | Chang, Tay-Rong | en |
dc.contributor.author | Zeng, Qingsheng | en |
dc.contributor.author | Liu, Fucai | en |
dc.contributor.author | Wang, Qi Jie | en |
dc.contributor.author | Jeng, Horng-Tay | en |
dc.contributor.author | Lin, Hsin | en |
dc.contributor.author | Trampert, Achim | en |
dc.contributor.author | Shen, Zexiang | en |
dc.contributor.author | Suenaga, Kazu | en |
dc.contributor.author | Liu, Zheng | en |
dc.date.accessioned | 2017-05-08T07:18:14Z | en |
dc.date.accessioned | 2019-12-06T14:58:56Z | - |
dc.date.available | 2017-05-08T07:18:14Z | en |
dc.date.available | 2019-12-06T14:58:56Z | - |
dc.date.copyright | 2016 | en |
dc.date.issued | 2016 | en |
dc.identifier.citation | Yu, P., Lin, J., Sun, L., Le, Q. L., Yu, X., & Gao, G. (2016). Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer. Advanced Materials, 29(4), 1603991-. | en |
dc.identifier.issn | 0935-9648 | en |
dc.identifier.uri | https://hdl.handle.net/10356/82610 | - |
dc.description | 22 p. | en |
dc.description.abstract | A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1−x)Te2x, where x equals 0% –100%). The optical bandgaps of the WSe2(1−x)Te2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices. | en |
dc.description.sponsorship | NRF (Natl Research Foundation, S’pore) | en |
dc.description.sponsorship | MOE (Min. of Education, S’pore) | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Advanced Materials | en |
dc.rights | © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adma.201603991]. | en |
dc.subject | 2D materials | en |
dc.subject | Band gap | en |
dc.title | Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Electrical and Electronic Engineering | en |
dc.contributor.school | School of Materials Science & Engineering | en |
dc.contributor.school | School of Physical and Mathematical Sciences | en |
dc.identifier.doi | 10.1002/adma.201603991 | en |
dc.description.version | Accepted version | en |
dc.identifier.rims | 198959 | en |
item.fulltext | With Fulltext | - |
item.grantfulltext | open | - |
Appears in Collections: | EEE Journal Articles MSE Journal Articles SPMS Journal Articles |
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File | Description | Size | Format | |
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Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer.pdf | 1.93 MB | Adobe PDF | View/Open |
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