Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82610
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dc.contributor.authorYu, Pengen
dc.contributor.authorLin, Junhaoen
dc.contributor.authorSun, Linfengen
dc.contributor.authorLe, Quang Luanen
dc.contributor.authorYu, Xuechaoen
dc.contributor.authorGao, Guanhuien
dc.contributor.authorHsu, Chuang-Hanen
dc.contributor.authorWu, Dien
dc.contributor.authorChang, Tay-Rongen
dc.contributor.authorZeng, Qingshengen
dc.contributor.authorLiu, Fucaien
dc.contributor.authorWang, Qi Jieen
dc.contributor.authorJeng, Horng-Tayen
dc.contributor.authorLin, Hsinen
dc.contributor.authorTrampert, Achimen
dc.contributor.authorShen, Zexiangen
dc.contributor.authorSuenaga, Kazuen
dc.contributor.authorLiu, Zhengen
dc.date.accessioned2017-05-08T07:18:14Zen
dc.date.accessioned2019-12-06T14:58:56Z-
dc.date.available2017-05-08T07:18:14Zen
dc.date.available2019-12-06T14:58:56Z-
dc.date.copyright2016en
dc.date.issued2016en
dc.identifier.citationYu, P., Lin, J., Sun, L., Le, Q. L., Yu, X., & Gao, G. (2016). Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer. Advanced Materials, 29(4), 1603991-.en
dc.identifier.issn0935-9648en
dc.identifier.urihttps://hdl.handle.net/10356/82610-
dc.description22 p.en
dc.description.abstractA metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1−x)Te2x, where x equals 0% –100%). The optical bandgaps of the WSe2(1−x)Te2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.language.isoenen
dc.relation.ispartofseriesAdvanced Materialsen
dc.rights© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adma.201603991].en
dc.subject2D materialsen
dc.subjectBand gapen
dc.titleMetal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayeren
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1002/adma.201603991en
dc.description.versionAccepted versionen
dc.identifier.rims198959en
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