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Title: Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation
Authors: Zhu, Minmin
Wu, Jing
Du, Zehui
Tsang, Siuhon
Teo, Edwin Hang Tong
Keywords: P-N Junctions
Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Zhu, M., Wu, J., Du, Z., Tsang, S., & Teo, E. H. T. (2018). Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation. Journal of Applied Physics, 124(21), 215302-. doi:10.1063/1.5052589
Series/Report no.: Journal of Applied Physics
Abstract: High-quality metal-graphene contact is crucial for the fabrication of high-performance graphene transistors. Although Ti has been widely used as metal electrodes in graphene-based devices owing to its excellent adhesive capability, contact resistance (Rc) for Ti/graphene (Ti/Gr) is typically high and varies largely by three orders of magnitude from ∼103 to 106 Ω μm. Here, we have systematically investigated the effects of gate voltage (VG) and temperature (T) on Rc in the Ti/Gr interface. Besides significant VG dependence, Rc in the n branch is always larger than that in the p branch, indicating a Ti induced n-doping in graphene. In addition, Rc exhibits an anomalous temperature dependence and drops significantly as the temperature decreases, reaching ∼234 Ω μm at 20 K. Such Ti/Gr contact can adjust the Fermi energy of up to 0.15 eV and can also directly form a well-defined sharp p-n junction without extra gates or chemical doping. These findings pave the way to develop the next generation of graphene-based electronic and optoelectronic devices.
ISSN: 0021-8979
DOI: 10.1063/1.5052589
Rights: © 2018 The Author(s). All rights reserved. This paper was published by AIP in Journal of Applied Physics and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
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