Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82623
Full metadata record
DC FieldValueLanguage
dc.contributor.authorZhu, Minminen
dc.contributor.authorWu, Jingen
dc.contributor.authorDu, Zehuien
dc.contributor.authorTsang, Siuhonen
dc.contributor.authorTeo, Edwin Hang Tongen
dc.date.accessioned2019-07-02T04:16:41Zen
dc.date.accessioned2019-12-06T14:59:09Z-
dc.date.available2019-07-02T04:16:41Zen
dc.date.available2019-12-06T14:59:09Z-
dc.date.issued2018en
dc.identifier.citationZhu, M., Wu, J., Du, Z., Tsang, S., & Teo, E. H. T. (2018). Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation. Journal of Applied Physics, 124(21), 215302-. doi:10.1063/1.5052589en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://hdl.handle.net/10356/82623-
dc.description.abstractHigh-quality metal-graphene contact is crucial for the fabrication of high-performance graphene transistors. Although Ti has been widely used as metal electrodes in graphene-based devices owing to its excellent adhesive capability, contact resistance (Rc) for Ti/graphene (Ti/Gr) is typically high and varies largely by three orders of magnitude from ∼103 to 106 Ω μm. Here, we have systematically investigated the effects of gate voltage (VG) and temperature (T) on Rc in the Ti/Gr interface. Besides significant VG dependence, Rc in the n branch is always larger than that in the p branch, indicating a Ti induced n-doping in graphene. In addition, Rc exhibits an anomalous temperature dependence and drops significantly as the temperature decreases, reaching ∼234 Ω μm at 20 K. Such Ti/Gr contact can adjust the Fermi energy of up to 0.15 eV and can also directly form a well-defined sharp p-n junction without extra gates or chemical doping. These findings pave the way to develop the next generation of graphene-based electronic and optoelectronic devices.en
dc.format.extent7 p.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.rights© 2018 The Author(s). All rights reserved. This paper was published by AIP in Journal of Applied Physics and is made available with permission of The Author(s).en
dc.subjectP-N Junctionsen
dc.subjectEngineering::Electrical and electronic engineeringen
dc.subjectGrapheneen
dc.titleGate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formationen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationNanoelectronics Center of Excellenceen
dc.contributor.organizationCINTRA CNRS/NTU/THALESen
dc.contributor.researchTemasek Laboratoriesen
dc.identifier.doi10.1063/1.5052589en
item.fulltextWith Fulltext-
item.grantfulltextopen-
Appears in Collections:EEE Journal Articles
TL Journal Articles

SCOPUSTM   
Citations 50

8
Updated on Jul 18, 2024

Web of ScienceTM
Citations 20

7
Updated on Oct 31, 2023

Page view(s)

413
Updated on Jul 18, 2024

Download(s) 50

131
Updated on Jul 18, 2024

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.