Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82644
Title: Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires
Authors: Chen, Weifeng
He, Yan
Sun, Changqing
Ouyang, Gang
Keywords: Continuum mechanics
Si nanowire
Issue Date: 2016
Source: Chen, W., He, Y., Sun, C., & Ouyang, G. (2016). Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires. AIP Advances, 6(1), 015313-.
Series/Report no.: AIP Advances
Abstract: The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interfacebond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Geepitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Geepitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.
URI: https://hdl.handle.net/10356/82644
http://hdl.handle.net/10220/40263
ISSN: 2158-3226
DOI: 10.1063/1.4940768
Schools: School of Electrical and Electronic Engineering 
Rights: © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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