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dc.contributor.authorChen, Weifengen
dc.contributor.authorHe, Yanen
dc.contributor.authorSun, Changqingen
dc.contributor.authorOuyang, Gangen
dc.identifier.citationChen, W., He, Y., Sun, C., & Ouyang, G. (2016). Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires. AIP Advances, 6(1), 015313-.en
dc.description.abstractThe thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interfacebond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Geepitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Geepitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.en
dc.format.extent8 p.en
dc.relation.ispartofseriesAIP Advancesen
dc.rights© 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (
dc.subjectContinuum mechanicsen
dc.subjectSi nanowireen
dc.titleInterface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowiresen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.description.versionPublished versionen
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