Please use this identifier to cite or link to this item:
Title: Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires
Authors: Chen, Weifeng
He, Yan
Sun, Changqing
Ouyang, Gang
Keywords: Continuum mechanics
Si nanowire
Issue Date: 2016
Source: Chen, W., He, Y., Sun, C., & Ouyang, G. (2016). Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires. AIP Advances, 6(1), 015313-.
Series/Report no.: AIP Advances
Abstract: The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interfacebond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Geepitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Geepitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.
ISSN: 2158-3226
DOI: 10.1063/1.4940768
Schools: School of Electrical and Electronic Engineering 
Rights: © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Files in This Item:
File Description SizeFormat 
Interface bond relaxation on the thermal conductivity of SiGe core-shell nanowires.pdf996.28 kBAdobe PDFThumbnail

Citations 50

Updated on Jul 11, 2024

Web of ScienceTM
Citations 20

Updated on Oct 30, 2023

Page view(s) 50

Updated on Jul 16, 2024

Download(s) 50

Updated on Jul 16, 2024

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.