Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82706
Full metadata record
DC FieldValueLanguage
dc.contributor.authorTan, Chaoliangen
dc.contributor.authorLiu, Zhengdongen
dc.contributor.authorHuang, Weien
dc.contributor.authorZhang, Huaen
dc.date.accessioned2016-03-18T05:57:39Zen
dc.date.accessioned2019-12-06T15:00:45Z-
dc.date.available2016-03-18T05:57:39Zen
dc.date.available2019-12-06T15:00:45Z-
dc.date.issued2015en
dc.identifier.citationTan, C., Liu, Z., Huang, W., & Zhang, H. (2015). Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials. Chemical Society Reviews, 44(9), 2615-2628.en
dc.identifier.issn0306-0012en
dc.identifier.urihttps://hdl.handle.net/10356/82706-
dc.description.abstractUltrathin two-dimensional (2D) nanomaterials, such as graphene and MoS2, hold great promise for electronics and optoelectronics due to their distinctive physical and electronic properties. Recent progress in high-yield, massive production of ultrathin 2D nanomaterials via various solution-based methods allows them to be easily integrated into electronic devices via solution processing techniques. Non-volatile resistive memory devices based on ultrathin 2D nanomaterials have been emerging as promising alternatives for the next-generation data storage devices due to their high flexibility, three-dimensional-stacking capability, simple structure, transparency, easy fabrication and low cost. In this tutorial review, we will summarize the recent progress in the utilization of solution-processed ultrathin 2D nanomaterials for fabrication of non-volatile resistive memory devices. Moreover, we demonstrate how to achieve excellent device performance by engineering the active layers, electrodes and/or device structure of resistive memory devices. On the basis of current status, the discussion is concluded with some personal insights into the challenges and opportunities in future research directions.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.format.extent14 p.en
dc.language.isoenen
dc.relation.ispartofseriesChemical Society Reviewsen
dc.rightsThis article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.en
dc.subjectNaonmaterialsen
dc.titleNon-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterialsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1039/C4CS00399Cen
dc.description.versionPublished versionen
item.fulltextWith Fulltext-
item.grantfulltextopen-
Appears in Collections:MSE Journal Articles

SCOPUSTM   
Citations 1

186
Updated on Jul 16, 2020

PublonsTM
Citations 1

218
Updated on Mar 10, 2021

Page view(s) 50

318
Updated on Jun 16, 2021

Download(s) 20

147
Updated on Jun 16, 2021

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.