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Title: Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials
Authors: Tan, Chaoliang
Liu, Zhengdong
Huang, Wei
Zhang, Hua
Keywords: Naonmaterials
Issue Date: 2015
Source: Tan, C., Liu, Z., Huang, W., & Zhang, H. (2015). Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials. Chemical Society Reviews, 44(9), 2615-2628.
Series/Report no.: Chemical Society Reviews
Abstract: Ultrathin two-dimensional (2D) nanomaterials, such as graphene and MoS2, hold great promise for electronics and optoelectronics due to their distinctive physical and electronic properties. Recent progress in high-yield, massive production of ultrathin 2D nanomaterials via various solution-based methods allows them to be easily integrated into electronic devices via solution processing techniques. Non-volatile resistive memory devices based on ultrathin 2D nanomaterials have been emerging as promising alternatives for the next-generation data storage devices due to their high flexibility, three-dimensional-stacking capability, simple structure, transparency, easy fabrication and low cost. In this tutorial review, we will summarize the recent progress in the utilization of solution-processed ultrathin 2D nanomaterials for fabrication of non-volatile resistive memory devices. Moreover, we demonstrate how to achieve excellent device performance by engineering the active layers, electrodes and/or device structure of resistive memory devices. On the basis of current status, the discussion is concluded with some personal insights into the challenges and opportunities in future research directions.
ISSN: 0306-0012
DOI: 10.1039/C4CS00399C
Rights: This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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