Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82791
Title: Coupling and Interlayer Exciton in Twist-Stacked WS2 Bilayers
Authors: Zheng, Shoujun
Sun, Linfeng
Zhou, Xiaohao
Liu, Fucai
Liu, Zheng
Shen, Zexiang
Fan, Hong Jin
Keywords: 2D materials
transition metal dichalcogenides
interlayer coupling
interlayer exciton
Issue Date: 2015
Source: Zheng, S., Sun, L., Zhou, X., Liu, F., Liu, Z., Shen, Z., et al. (2015). Coupling and interlayer exciton in twist-stacked WS2 bilayers. Advanced Optical Materials, 3(11), 1600-1605.
Series/Report no.: Advanced Optical Materials
Abstract: Interlayer electronic and mechanical couplings of transitional metal dichalcogenides (TMDs) due to Van der Waals force determine their band structure and Raman modes evolution, respectively. We have synthesized twist-stacked WS2 bilayers with twist angles of 0°, 13°, 30°, 41°, 60°, and 83° via chemical-vapor deposited, which allows us to study the coupling effect by Raman and photoluminescence spectroscopy and density function calculation. The photoluminescence property implies that these random-twisted WS2 bilayers behave as quasidirect bandgap material due to weakened interlayer coupling as a result of larger interlayer distances than the non-twisted 0° and 60° stacked WS2 bilayers (with an indirect band gap). In addition, an additional small peak (AI) near the excitonic transition peak (A) is observed from the twisted bilayers, which can be attributed to the interlayer exciton transition.
URI: https://hdl.handle.net/10356/82791
http://hdl.handle.net/10220/40340
DOI: 10.1002/adom.201500301
Rights: © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Optical Materials, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adom.201500301].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles
SPMS Journal Articles

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