Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82824
Title: Charge-Induced Second-Harmonic Generation in Bilayer WSe2
Authors: Yu, Huakang
Talukdar, Deep
Xu, Weigao
Khurgin, Jacob B.
Xiong, Qihua
Keywords: charged-induced second-harmonic generation
two-dimensional layered materials
tungsten diselenide
bond charge model
charge accumulation
screening effect
Issue Date: 2015
Source: Yu, H., Talukdar, D., Xu, W., Khurgin, J. B., & Xiong, Q. (2015). Charge-induced second-harmonic generation in bilayer WSe2. Nano Letters, 15(8), 5653-5657.
Series/Report no.: Nano Letters
Abstract: Controlling nonlinear light-matter interaction is important from fundamental science point of view as well as a basis for future optoelectronic devices1,2. Recent advances in twodimensional crystals have created opportunities to manipulate nonlinear processes electrically3-8. Here we report a strong second-harmonic generation (SHG) in a 2D WSe2 bilayer crystal caused by a back gate field. This unusual process takes place only when the gate polarity causes charge accumulation rather than depletion. Analysis based on bondcharge model traces the origin of SHG to the non-uniform field distribution within a single monolayer, caused by the accumulated sub-monolayer screening charge in the tungsten plane. We name this phenomenon charge-induced SHG (CHISHG), which is fundamentally different from the field- or current-induced SHG3-11. Our findings provide a potentially valuable technique for understanding and noninvasive probing of charge and current distributions in future low dimensional electronic devices.
URI: https://hdl.handle.net/10356/82824
http://hdl.handle.net/10220/40339
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.5b02547
Rights: © 2015 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by Nano Letters, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/acs.nanolett.5b02547].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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