Please use this identifier to cite or link to this item:
|Title:||Improved densification and thermoelectric performance of In5SnSbO12 via Ga doping||Authors:||Zhu, Beibei
Tan, Thiam Teck
Hng, Huey Hoon
|Issue Date:||2018||Source:||Zhu, B., Zhang, T., Luo, Y., Wang, Y., Tan, T. T., Donelson, R., . . . Li, S. (2018). Improved densification and thermoelectric performance of In5SnSbO12 via Ga doping. Journal of Materials Science, 53(9), 6741-6751. doi:10.1007/s10853-018-2048-3||Series/Report no.:||Journal of Materials Science||Abstract:||In5SnSbO12 is being considered for use in thermoelectric applications. It has a satisfactory electrical conductivity and is expected to possess low thermal conductivity. However, it is difficult to densify In5SnSbO12 by conventional solid-state reaction method. In this work, we demonstrated that Ga doping could increase the relative density of In5SnSbO12, from ~ 60% (x = 0) to ~ 90% (x = 0.1). The improved densification may be attributable to the increased cationic occupancy after the addition of Ga and the reduced grain size induced by the presence of the secondary phase Ga2In6Sn2O16. The improved relative density led to a significant reduction in electrical resistivity; for example, for x = 0.1, the lowest electrical resistivity was ~ 0.002 Ω cm at 973 K, which was five times lower than that of the undoped sample (x = 0). The resultant power factor of this sample had a value of 3.4 × 10−4 Wm−1 K−2 at 973 K, which was nearly four times higher than that of the undoped sample. Although thermal conductivities were increased with Ga doping due to the enhanced densification, they were lower than that of In2O3. The highest thermoelectric performance was achieved in the sample with x = 0.05, specifically zT ~ 0.17 at 973 K. These results indicate that the addition of Ga to In5SnSbO12 results in a material which is more promising for thermoelectric applications.||URI:||https://hdl.handle.net/10356/82849
|ISSN:||0022-2461||DOI:||10.1007/s10853-018-2048-3||Rights:||© 2018 Springer Science+Business Media, LLC, part of Springer Nature. All rights reserved.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MSE Journal Articles|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.