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dc.contributor.authorLee, Kwang Hongen
dc.contributor.authorBao, Shuyuen
dc.contributor.authorZhang, Lien
dc.contributor.authorKohen, Daviden
dc.contributor.authorFitzgerald, Eugeneen
dc.contributor.authorTan, Chuan Sengen
dc.identifier.citationLee, K. H., Bao, S., Zhang, L., Kohen, D., Fitzgerald, E., & Tan, C. S. (2016). Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process. Applied Physics Express, 9(8), 086501-.en
dc.description.abstractThe integration of III–V semiconductors (e.g., GaAs and GaN) and silicon-on-insulator (SOI)-CMOS on a 200 mm Si substrate is demonstrated. The SOI-CMOS donor wafer is temporarily bonded on a Si handle wafer and thinned down. A second GaAs/Ge/Si substrate is then bonded to the SOI-CMOS-containing handle wafer. After that, the Si from the GaAs/Ge/Si substrate is removed. The GaN/Si substrate is then bonded to the SOI–GaAs/Ge-containing handle wafer. Finally, the handle wafer is released to realize the SOI–GaAs/Ge/GaN/Si hybrid structure on a Si substrate. By this method, the functionalities of the materials used can be combined on a single Si platform.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent14 p.en
dc.relation.ispartofseriesApplied Physics Expressen
dc.rights© 2016 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Applied Physics Express, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].en
dc.subjectCMOS integrated circuitsen
dc.subjectGallium arsenideen
dc.titleIntegration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer processen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.description.versionAccepted versionen
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