Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/82959
Title: | High-speed silicon modulators for the 2 μm wavelength band | Authors: | Cao, Wei Hagan, David Thomson, David J. Nedeljkovic, Milos Knights, Andy Wang, Junjia Gardes, Frederic Zhang, Weiwei Liu, Shenghao Li, Ke Xin, Guo Wang, Wanjun Wang, Hong Reed, Graham T. Mashanovich, Goran Z. Littlejohns, Callum George Shaif-Ul Alam Mohamed Said Rouifed |
Keywords: | Silicon Modulators Wavelength Band DRNTU::Engineering::Electrical and electronic engineering |
Issue Date: | 2018 | Source: | Cao, W., Hagan, D., Thomson, D. J., Nedeljkovic, M., Littlejohns, C. G., Knights, A., . . . Mashanovich, G. Z. (2018). High-speed silicon modulators for the 2 μm wavelength band. Optica, 5(9), 1055-1062. doi: 10.1364/OPTICA.5.001055 | Series/Report no.: | Optica | Abstract: | The 2 μm wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach–Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (V𝜋��·L𝜋��) is 2.68 V·cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 μm measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 μm wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 μm window. | URI: | https://hdl.handle.net/10356/82959 http://hdl.handle.net/10220/47618 |
DOI: | 10.1364/OPTICA.5.001055 | Schools: | School of Electrical and Electronic Engineering | Research Centres: | Silicon Technologies, Centre of Excellence | Rights: | © 2018 Optical Society of America under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
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High-speed silicon modulators for the 2 μm wavelength band.pdf | 2.16 MB | Adobe PDF | View/Open |
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