Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82959
Title: High-speed silicon modulators for the 2  μm wavelength band
Authors: Cao, Wei
Hagan, David
Thomson, David J.
Nedeljkovic, Milos
Knights, Andy
Wang, Junjia
Gardes, Frederic
Zhang, Weiwei
Liu, Shenghao
Li, Ke
Xin, Guo
Wang, Wanjun
Wang, Hong
Reed, Graham T.
Mashanovich, Goran Z.
Littlejohns, Callum George
Shaif-Ul Alam
Mohamed Said Rouifed
Keywords: Silicon Modulators
Wavelength Band
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Cao, W., Hagan, D., Thomson, D. J., Nedeljkovic, M., Littlejohns, C. G., Knights, A., . . . Mashanovich, G. Z. (2018). High-speed silicon modulators for the 2  μm wavelength band. Optica, 5(9), 1055-1062. doi: 10.1364/OPTICA.5.001055
Series/Report no.: Optica
Abstract: The 2 μm wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach–Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (V𝜋��·L𝜋��) is 2.68 V·cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 μm measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 μm wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 μm window.
URI: https://hdl.handle.net/10356/82959
http://hdl.handle.net/10220/47618
DOI: 10.1364/OPTICA.5.001055
Schools: School of Electrical and Electronic Engineering 
Research Centres: Silicon Technologies, Centre of Excellence 
Rights: © 2018 Optical Society of America under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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