Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82959
Full metadata record
DC FieldValueLanguage
dc.contributor.authorCao, Weien
dc.contributor.authorHagan, Daviden
dc.contributor.authorThomson, David J.en
dc.contributor.authorNedeljkovic, Milosen
dc.contributor.authorKnights, Andyen
dc.contributor.authorWang, Junjiaen
dc.contributor.authorGardes, Fredericen
dc.contributor.authorZhang, Weiweien
dc.contributor.authorLiu, Shenghaoen
dc.contributor.authorLi, Keen
dc.contributor.authorXin, Guoen
dc.contributor.authorWang, Wanjunen
dc.contributor.authorWang, Hongen
dc.contributor.authorReed, Graham T.en
dc.contributor.authorMashanovich, Goran Z.en
dc.contributor.authorLittlejohns, Callum Georgeen
dc.contributor.authorShaif-Ul Alamen
dc.contributor.authorMohamed Said Rouifeden
dc.date.accessioned2019-02-07T08:49:56Zen
dc.date.accessioned2019-12-06T15:09:01Z-
dc.date.available2019-02-07T08:49:56Zen
dc.date.available2019-12-06T15:09:01Z-
dc.date.issued2018en
dc.identifier.citationCao, W., Hagan, D., Thomson, D. J., Nedeljkovic, M., Littlejohns, C. G., Knights, A., . . . Mashanovich, G. Z. (2018). High-speed silicon modulators for the 2  μm wavelength band. Optica, 5(9), 1055-1062. doi: 10.1364/OPTICA.5.001055en
dc.identifier.urihttps://hdl.handle.net/10356/82959-
dc.description.abstractThe 2 μm wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach–Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (V𝜋��·L𝜋��) is 2.68 V·cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 μm measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 μm wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 μm window.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent8 p.en
dc.language.isoenen
dc.relation.ispartofseriesOpticaen
dc.rights© 2018 Optical Society of America under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.en
dc.subjectSilicon Modulatorsen
dc.subjectWavelength Banden
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleHigh-speed silicon modulators for the 2  μm wavelength banden
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchSilicon Technologies, Centre of Excellenceen
dc.identifier.doi10.1364/OPTICA.5.001055en
dc.description.versionPublished versionen
item.grantfulltextopen-
item.fulltextWith Fulltext-
Appears in Collections:EEE Journal Articles
Files in This Item:
File Description SizeFormat 
High-speed silicon modulators for the 2  μm wavelength band.pdf2.16 MBAdobe PDFThumbnail
View/Open

SCOPUSTM   
Citations 5

142
Updated on Jul 19, 2024

Web of ScienceTM
Citations 5

104
Updated on Oct 30, 2023

Page view(s) 50

506
Updated on Jul 21, 2024

Download(s) 50

164
Updated on Jul 21, 2024

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.