Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/82966
Title: Unveiling the dual role of chemically synthesized copper doped zinc oxide for resistive switching applications
Authors: Gollu, Sankara Rao
Roy, Sounak
Banerjee, Souri
Kundu, Souvik
Boppidi, Pavan Kumar Reddy
Raj, P. Michael Preetam
Challagulla, Swapna
Keywords: Ferroelectric Devices
DRNTU::Engineering::Electrical and electronic engineering
Polarization
Issue Date: 2018
Source: Boppidi, P. K. R., Raj, P. M. P., Challagulla, S., Gollu, S. R., Roy, S., Banerjee, S., & Kundu, S. (2018). Unveiling the dual role of chemically synthesized copper doped zinc oxide for resistive switching applications. Journal of Applied Physics, 124(21), 214901-. doi:10.1063/1.5052619
Series/Report no.: Journal of Applied Physics
Abstract: In this study, efforts were devoted to unveiling the dual role of single crystalline Cu (5%) doped ZnO (Cu:ZnO) synthesized by a simple and low-cost chemical process and to investigate its efficacy on resistive switching (RS) applications. It was found that when Cu:ZnO was annealed at a lower temperature of 450 °C and integrated onto ITO/glass for RS applications, only oxygen mediated vacancies were responsible for its resistive switching. However, ferroelectric properties have been observed when the same Cu:ZnO was annealed at a higher temperature of 800 °C and integrated onto Nb doped SrTiO3. X-ray diffraction, high resolution transmission electron microscope, x-ray photoelectron spectroscopy, UV-VIS-near infrared spectrometer, and piezoelectric force microscopy (PFM) were employed to study the crystallinity, interfaces, chemical compositions, bandgap, and domains in Cu:ZnO thin films, respectively. The bandgap of Cu:ZnO was found to be 3.20 eV. PFM study exhibits the domain inversion with 180° polarization inversion by applying an external bias, evidencing its effectiveness for memory applications. When the electrical characteristics were concerned, the RS device based on this ferroelectric Cu:ZnO offers better performance, such as lower SET/RESET voltages (∼1.40 V), higher retention (up to 106 s) without distortion, and higher ON/OFF ratio (2.20 × 103), as compared to the former lower temperature annealed Cu:ZnO devices. A band-diagram was proposed, and transport studies were developed to understand the operational mechanism of these devices. This study explains both the limits and scopes of Cu:ZnO RS devices and formulates an idea which may accelerate the design of future generation devices.
URI: https://hdl.handle.net/10356/82966
http://hdl.handle.net/10220/47526
ISSN: 0021-8979
DOI: 10.1063/1.5052619
Schools: School of Electrical and Electronic Engineering 
Rights: © 2018 American Institute of Physics. All rights reserved. This paper was published in Journal of Applied Physics and is made available with permission of American Institute of Physics.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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