Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83002
Title: Roles of inter-SWCNT junctions in resistive humidity response
Authors: Zhang, Kang
Zou, Jianping
Zhang, Qing
Keywords: Carrier hopping
Covalent functionalization
Sensitivity
Issue Date: 2015
Source: Zhang, K., Zou, J., & Zhang, Q. (2015). Roles of inter-SWCNT junctions in resistive humidity response. Nanotechnology, 26, 45501-.
Series/Report no.: Nanotechnology
Abstract: As a promising chemiresistor for gas sensing, the single-walled carbon nanotube (SWCNT) network has not yet been fully utilized for humidity detection. In this work, it is found that as humidity increases from 10% to 85%, the resistance of as-grown SWCNT networks first decreases and then increases. This non-monotonic resistive response to humidity limits their sensing capabilities. The competition between SWCNT resistance and inter-tube junction resistance changes is then found to be responsible for the non-monotonic resistive humidity responses. Moreover, creating sp3 scattering centers on the SWCNT sidewall by monovalent functionalization of four-bromobenzene diazonium tetrafluoroborate is shown to be capable of eliminating the influence from the inter-tube junctions, resulting in a continuous resistance drop as humidity increases from 10% to 85%. Our results revealed the competing resistive humidity sensing process in as-grown SWCNT networks, which could also be helpful in designing and optimizing as-grown SWCNT networks for humidity sensors and other gas sensors.
URI: https://hdl.handle.net/10356/83002
http://hdl.handle.net/10220/40372
ISSN: 0957-4484
DOI: 10.1088/0957-4484/26/45/455501
Rights: © 2015 IOP Publishing Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Nanotechnology, IOP Publishing Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1088/0957-4484/26/45/455501].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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