Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83005
Title: Design of a 4-level active photonics phase change switch using VO 2 and Ge 2 Sb 2 Te 5
Authors: Meng, Yun
Behera, Jitendra K.
Ke, Yujie
Chew, Litian
Wang, Yang
Long, Yi
Simpson, Robert E.
Keywords: Optical Coatings
Optical Constants
DRNTU::Engineering::Materials
Issue Date: 2018
Source: Meng, Y., Behera, J. K., Ke, Y., Chew, L., Wang, Y., Long, Y., & Simpson, R. E. (2018). Design of a 4-level active photonics phase change switch using VO2 and Ge2Sb2Te5. Applied Physics Letters, 113(7), 071901-. doi:10.1063/1.5043521
Series/Report no.: Applied Physics Letters
Abstract: The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge2Sb2Te5 and VO2 nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due to the independent structural phase transitions of VO2 and Ge2Sb2Te5 at different temperatures. The transfer matrix method was used to model Fresnel reflection for each structural phase combination and then to optimize the VO2 and Ge2Sb2Te5 layer thicknesses, which were found to be 70 nm and 50 nm. These multilevel optical switching results provide further possibilities to design composite materials for applications in active and programmable photonics.
URI: https://hdl.handle.net/10356/83005
http://hdl.handle.net/10220/47546
ISSN: 0003-6951
DOI: 10.1063/1.5043521
Rights: © 2018 The Author(s). All rights reserved. This paper was published by AIP in Applied Physics Letters and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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