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https://hdl.handle.net/10356/83005
Title: | Design of a 4-level active photonics phase change switch using VO 2 and Ge 2 Sb 2 Te 5 | Authors: | Meng, Yun Behera, Jitendra K. Ke, Yujie Chew, Litian Wang, Yang Long, Yi Simpson, Robert E. |
Keywords: | Optical Coatings Optical Constants DRNTU::Engineering::Materials |
Issue Date: | 2018 | Source: | Meng, Y., Behera, J. K., Ke, Y., Chew, L., Wang, Y., Long, Y., & Simpson, R. E. (2018). Design of a 4-level active photonics phase change switch using VO2 and Ge2Sb2Te5. Applied Physics Letters, 113(7), 071901-. doi:10.1063/1.5043521 | Series/Report no.: | Applied Physics Letters | Abstract: | The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge2Sb2Te5 and VO2 nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due to the independent structural phase transitions of VO2 and Ge2Sb2Te5 at different temperatures. The transfer matrix method was used to model Fresnel reflection for each structural phase combination and then to optimize the VO2 and Ge2Sb2Te5 layer thicknesses, which were found to be 70 nm and 50 nm. These multilevel optical switching results provide further possibilities to design composite materials for applications in active and programmable photonics. | URI: | https://hdl.handle.net/10356/83005 http://hdl.handle.net/10220/47546 |
ISSN: | 0003-6951 | DOI: | 10.1063/1.5043521 | Rights: | © 2018 The Author(s). All rights reserved. This paper was published by AIP in Applied Physics Letters and is made available with permission of The Author(s). | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | MSE Journal Articles |
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Design of a 4-level active photonics phase change switch using VO2 and Ge2Sb2Te5.pdf | 2.11 MB | Adobe PDF | ![]() View/Open |
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