Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83033
Title: Transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) exfoliation technique has strong influence upon their capacitance
Authors: Ambrosi, Adriano
Eng, Alex Yong Sheng
Sofer, Zdeněk
Pumera, Martin
Mayorga-Martinez, Carmen Clotilde
Keywords: Transition metal dichalcogenides
Capacitance
Issue Date: 2015
Source: Mayorga-Martinez, C. C., Ambrosi, A., Eng, A. Y. S., Sofer, Z., & Pumera, M. (2015). Transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) exfoliation technique has strong influence upon their capacitance. Electrochemistry Communications, 56, 24-28.
Series/Report no.: Electrochemistry Communications
Abstract: Transition metal dichacogenides (TMD) represent an important class of layered compounds which are gaining lately an enormous interest in electrochemistry. Exfoliation of TMD materials to obtain single to few layer sheets is generally obtained through the intercalation of organolithium compounds. Here we investigated and compared the capacitive behavior of four representative TMD materials, i.e. MoS2, MoSe2, WS2 and WSe2 exfoliated with different organolithium intercalators, such as methyllithium (Me-Li), n-butyllithium (n-Bu-Li) and tert-butyllithium (t-Bu-Li). We found that both the metal/chalcogen composition and the type of intercalator strongly affect the capacitance of the exfoliated materials. These findings shall have profound implications on the construction of high-performance energy storage devices based on TMD.
URI: https://hdl.handle.net/10356/83033
http://hdl.handle.net/10220/42363
ISSN: 1388-2481
DOI: 10.1016/j.elecom.2015.03.017
Schools: School of Physical and Mathematical Sciences 
Rights: © 2015 Elsevier
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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