Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83054
Title: Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures
Authors: Zhou, Jiadong
Tang, Bijun
Lin, Junhao
Lv, Danhui
Shi, Jia
Sun, Linfeng
Zeng, Qingsheng
Niu, Lin
Liu, Fucai
Wang, Xiaowei
Liu, Xinfeng
Suenaga, Kazu
Jin, Chuanhong
Liu, Zheng
Keywords: Engineering::Materials
Morphology Engineering
MoS2-WS2 Heterostructure
Issue Date: 2018
Source: Zhou, J., Tang, B., Lin, J., Lv, D., Shi, J., Sun, L., … Liu, Z. (2018). Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures. Advanced Functional Materials, 28(31), 1801568-. doi:10.1002/adfm.201801568
Series/Report no.: Advanced Functional Materials
Abstract: In recent years, heterostructures formed in transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties beyond the individual components. Atomically thin TMD heterostructures, such as MoS2‐WS2, MoS2‐MoSe2, MoS2‐WSe2, and WSe2‐WS2, are synthesized so far via chemical vapor deposition (CVD) method. Engineering the morphology of domains including size and shape, however, still remains challenging. Here, a one‐step CVD strategy on the morphology engineering of MoS2 and WS2 domains within the monolayer MoS2‐WS2 lateral heterostructures through controlling the weight ratio of precursors, MoO3 and WO3, as well as tuning the reaction temperature is reported. Not only can the size ratio in terms of area between WS2 and MoS2 domains be easily controlled from less than 1 to more than 20, but also the overall heterostructure size can be tuned from several to hundreds of micrometers. Intriguingly, the quantum well structure, a WS2 stripe embedded in the MoS2 matrix, is also observed in the as‐synthesized heterostructures, offering opportunities to study quantum confinement effects and quantum well applications. This approach paves the way for the large‐scale fabrication of MoS2‐WS2 lateral heterostructures with controllable domain morphology, and shall be readily extended to morphology engineering of other TMD heterostructures.
URI: https://hdl.handle.net/10356/83054
http://hdl.handle.net/10220/50410
ISSN: 1616-301X
DOI: 10.1002/adfm.201801568
Rights: This is the peer reviewed version of the following article: Zhou, J., Tang, B., Lin, J., Lv, D., Shi, J., Sun, L., … Liu, Z. (2018). Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures. Advanced Functional Materials, 28(31), 1801568-. doi:10.1002/adfm.201801568, which has been published in final form athttp://dx.doi.org/10.1002/adfm.201801568. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles
SPMS Journal Articles

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