Please use this identifier to cite or link to this item:
Title: Signature of magnetization in Xe ions implanted ZnO : correlation with oxygen defects as probed by photoelectron spectroscopy
Authors: Chatterjee, Ratnamala
Kanjilal, D.
Mishra, D. K.
Pattanaik, Shreenu
Dash, S.
Sharma, Manoj Kumar
Kumar, Pravin
Ray, Sekhar C.
Keywords: Implantation
Issue Date: 2017
Source: Mishra, D. K., Pattanaik, S., Dash, S., Sharma, M. K., Kumar, P., Ray, S. C., Chatterjee, R.,& Kanjilal, D. (2017). Signature of Magnetization in Xe Ions Implanted ZnO: Correlation with Oxygen Defects as Probed by Photoelectron Spectroscopy. Journal of Nanoscience and Nanotechnology, 17(11), 8494-8499. doi:10.1166/jnn.2017.15179
Series/Report no.: Journal of Nanoscience and Nanotechnology
Abstract: 300 keV Xe ions were implanted in single crystals of ZnO at room temperature with three fluences viz. 4.9 × 1015, 8.1 × 1015 and 1.1 × 1016 ions/cm2. The Xe ion implanted ZnO samples were characterized by UV-Vis spectroscopy, X-ray photo-electron spectroscopy (XPS) and SQUID magnetometer. It has been noticed that the samples implanted with lowest and highest ion fluences show magnetization higher than that in the sample implanted with intermediate ion fluence. This unusual trend in the change of the magnetization is attributed to the lattice distortion and the variation in the lattice oxygen concentration as evidenced from the core level XPS results. The results are explained in terms of oxygen vacancies mediated bound magnetic polarons (BMP) and ion induced effects on their formation.
ISSN: 1533-4880
DOI: 10.1166/jnn.2017.15179
Rights: © 2017 American Scientific Publishers. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

Citations 20

Updated on Mar 10, 2021

Citations 20

Updated on Mar 3, 2021

Page view(s)

Updated on Jun 27, 2022

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.