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Title: Compositionally controlled plasmonics in amorphous semiconductor metasurfaces
Authors: Piccinotti, Davide
Gholipour, Behrad
Yao, Jin
Macdonald, Kevin F.
Hayden, Brian E.
Zheludev, Nikolay I.
Keywords: Semiconductor Materials
Issue Date: 2018
Source: Piccinotti, D., Gholipour, B., Yao, J., Macdonald, K. F., Hayden, B. E., & Zheludev, N. I. (2018). Compositionally controlled plasmonics in amorphous semiconductor metasurfaces. Optics Express, 26(16), 20861-. doi:10.1364/OE.26.020861
Series/Report no.: Optics Express
Abstract: Amorphous bismuth telluride (Bi:Te) provides a composition-dependent, CMOS-compatible alternative material platform for plasmonics in the ultraviolet-visible spectral range. Thin films of the chalcogenide semiconductor are found, using high-throughput physical vapor deposition and characterization techniques, to exhibit a plasmonic response (a negative value of the real part of relative permittivity) over a band of wavelengths extending from ~250 nm to between 530 and 978 nm, depending on alloy composition (Bi:Te at% ratio). The plasmonic response is illustrated via the fabrication of subwavelength period nano-grating metasurfaces, which present strong, period-dependent plasmonic absorption resonances in the visible range, manifested in the perceived color of the nanostructured domains in reflection.
DOI: 10.1364/OE.26.020861
Schools: School of Physical and Mathematical Sciences 
Research Centres: Centre for Disruptive Photonic Technologies (CDPT) 
The Photonics Institute 
Rights: © 2018 Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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