Compositionally controlled plasmonics in amorphous semiconductor metasurfaces

Abstract

Amorphous bismuth telluride (Bi:Te) provides a composition-dependent, CMOS-compatible alternative material platform for plasmonics in the ultraviolet-visible spectral range. Thin films of the chalcogenide semiconductor are found, using high-throughput physical vapor deposition and characterization techniques, to exhibit a plasmonic response (a negative value of the real part of relative permittivity) over a band of wavelengths extending from ~250 nm to between 530 and 978 nm, depending on alloy composition (Bi:Te at% ratio). The plasmonic response is illustrated via the fabrication of subwavelength period nano-grating metasurfaces, which present strong, period-dependent plasmonic absorption resonances in the visible range, manifested in the perceived color of the nanostructured domains in reflection.