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|Title:||Electrically controlled enhancement in plasmonic mid-infrared photodiode||Authors:||Tobing, Landobasa Yosef Mario
Zhang, Dao Hua
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering
|Issue Date:||2018||Source:||Tong, J., Tobing, L. Y. M., & Zhang, D. H. (2018). Electrically controlled enhancement in plasmonic mid-infrared photodiode. Optics Express, 26(5), 5452-. doi:10.1364/OE.26.005452||Series/Report no.:||Optics Express||Abstract:||Surface plasmon polaritons (SPPs) have been attracting tremendous attention in application of enhanced optoelectronic devices owing to their capability of localizing electromagnetic waves in deep subwavelength scale. We propose a plasmonic mid-infrared InAsSb-based n-i-p photodiode with electrically-controlled photocurrent enhancement achieved by controlling the overlap between SPP depth and the absorption layer, from which maximum electrically controlled enhancement factors of ~5x and ~6x have been achieved for room temperature (293 K) and 77 K operation, respectively, corresponding to electrical tuning factors of 11.9 and 26. The maximum detectivities obtained at the two temperatures are 0.8 × 1010 Jones and 5 × 1011 Jones, respectively. This electrically controlled enhancement expands the application capability of plasmonic photodiodes.||URI:||https://hdl.handle.net/10356/83146
|DOI:||10.1364/OE.26.005452||Rights:||© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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