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Title: Compact model characteristics for generic MIS-HEMTs
Authors: Chiah, Siau Ben
Ajaykumar, Arjun
Liu, Xu
Syamal, Binit
Zhou, Hong Tao
Zhou, Xing
Keywords: 2-D Electron Gas
Compact Model
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Zhou, X., Chiah, S. B., Syamal, B., Zhou, H. T., Ajaykumar, A., & Liu, X. (2014). Compact model characteristics for generic MIS-HEMTs. TechConnect Briefs, 2, 495-498.
Series/Report no.: TechConnect Briefs
Abstract: III-V channel field-effect transistors (FETs), such as metal–insulator–semiconductor high electron-mobility transistors (MIS-HEMTs), have emerged as promising candidates for future generation high-frequency, high-voltage, and high-power applications. Development of a compact model for generic HEMTs in III-V/Si co-integrated hybrid circuit design is becoming an urgent need for semiconductor industry. This paper presents device characteristics as modeled by the compact model (Xsim) for generic MIS-HEMTs. The model is based on unified regional modeling (URM) of the 2-dimensional electron gas (2DEG) charge density, including the two lowest sub-bands of the triangular well in the strong-inversion region, and extending to the moderate-inversion and subthreshold regions in a single-piece formulation. The 2DEG charge density model is adopted in the surface-potential-based current/charge model for conventional bulk/SOI/multigate MOSFETs, which makes it compatible and scalable for future III-V/Si co-integrated technologies. HEMT-specific features are also discussed, such as nonlinear source/drain access resistances, current-collapse, self-heating, parallel-channel, and quasi-ballistic effects.
Schools: School of Electrical and Electronic Engineering 
Rights: © 2014 The Author(s). All rights reserved. This paper was published by TechConnect in TechConnect Briefs and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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