Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83338
Title: Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
Authors: Li, Yang
Ng, Geok Ing
Arulkumaran, Subramaniam
Ye, Gang
Liu, Zhi Hong
Ranjan, Kumud
Ang, Kian Siong
Keywords: Leakage currents
Temperature measurement
Issue Date: 2017
Source: Li, Y., Ng, G. I., Arulkumaran, S., Ye, G., Liu, Z. H., Ranjan, K., et al. (2017). Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN. Journal of Applied Physics, 121(4), 044504-.
Series/Report no.: Journal of Applied Physics
Abstract: The gate leakage current mechanism of AlGaN/GaN Schottky barrier diodes (SBDs) and high-electron-mobility transistors (HEMTs) with sputtered TiN is systematically investigated. The reverse leakage current (JR) of TiN SBDs increases exponentially with the increase of reverse voltage (VR) from 0 to −3.2 V (Reg. I). This conduction behavior is dominated by Poole-Frenkel emission from TiN through an interface state of 0.53 eV to the conductive dislocation-related continuum states. The obtained interface state of 0.53 eV may be due to the plasma damage to the surface of the AlGaN/GaN HEMT structure during the TiN sputtering. When the TiN SBDs are biased with −20 < VR < −3.2 V, JR saturated due to the depletion of the 2-dimensional electron gas (2DEG) channel (Reg. II). This conduction behavior is dominated by the trap-assisted tunneling through the interface state at ∼0.115 eV above the Fermi level. The three terminal OFF-state gate leakage current of AlGaN/GaN HEMTs exhibited an activation energy of 0.159 eV, which is in close agreement with the obtained interface state of ∼0.115 eV from saturated JR (Reg. II) of the SBDs. The observation of the negative temperature coefficient (−1.75 V/K) from the OFF-state breakdown voltage (at 1 μA/mm) of AlGaN/GaN HEMTs is due to the trap-assisted tunneling mechanism, which is also well correlated with the conduction mechanism realized from the reverse leakage current of the SBDs.
URI: https://hdl.handle.net/10356/83338
http://hdl.handle.net/10220/42576
ISSN: 0021-8979
DOI: 10.1063/1.4974959
Rights: © 2017 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4974959]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
TL Journal Articles

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