Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83365
Title: Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes
Authors: Zhang, Yiping
Zhang, Zi-Hui
Tan, Swee Tiam
Hernandez-Martinez, Pedro Ludwig
Zhu, Binbin
Lu, Shunpeng
Kang, Xue Jun
Sun, Xiao Wei
Demir, Hilmi Volkan
Keywords: Doping
Light emitting diodes
Issue Date: 2017
Source: Zhang, Y., Zhang, Z.-H., Tan, S. T., Hernandez-Martinez, P. L., Zhu, B., Lu, S., et al. (2017). Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes. Applied Physics Letters, 110(3), 033506-.
Series/Report no.: Applied Physics Letters
Abstract: Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.
URI: https://hdl.handle.net/10356/83365
http://hdl.handle.net/10220/42545
ISSN: 0003-6951
DOI: 10.1063/1.4973743
Rights: © 2017 American Institute of Physics (AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4973743]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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