Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83368
Title: Layer Engineering of 2D Semiconductor Junctions
Authors: Li, Bo
Xie, Erqing
He, Yongmin
Sobhani, Ali
Lei, Sidong
Zhang, Zhuhua
Gong, Yongji
Jin, Zehua
Zhou, Wu
Yang, Yingchao
Zhang, Yuan
Wang, Xifan
Yakobson, Boris
Vajtai, Robert
Halas, Naomi J.
Ajayan, Pulickel
Keywords: Layer engineering
2D semiconductor junctions
Issue Date: 2016
Source: He, Y., Sobhani, A., Lei, S., Zhang, Z., Gong, Y., Jin, Z., et al. (2016). Layer Engineering of 2D Semiconductor Junctions. Advanced Materials, 28(25), 5126-5132.
Series/Report no.: Advanced Materials
Abstract: A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p–n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses.
URI: https://hdl.handle.net/10356/83368
http://hdl.handle.net/10220/42579
ISSN: 0935-9648
DOI: 10.1002/adma.201600278
Rights: © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adma.201600278].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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