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https://hdl.handle.net/10356/83368| Title: | Layer Engineering of 2D Semiconductor Junctions | Authors: | Li, Bo Xie, Erqing He, Yongmin Sobhani, Ali Lei, Sidong Zhang, Zhuhua Gong, Yongji Jin, Zehua Zhou, Wu Yang, Yingchao Zhang, Yuan Wang, Xifan Yakobson, Boris Vajtai, Robert Halas, Naomi J. Ajayan, Pulickel |
Keywords: | Layer engineering 2D semiconductor junctions |
Issue Date: | 2016 | Source: | He, Y., Sobhani, A., Lei, S., Zhang, Z., Gong, Y., Jin, Z., et al. (2016). Layer Engineering of 2D Semiconductor Junctions. Advanced Materials, 28(25), 5126-5132. | Series/Report no.: | Advanced Materials | Abstract: | A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p–n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses. | URI: | https://hdl.handle.net/10356/83368 http://hdl.handle.net/10220/42579 |
ISSN: | 0935-9648 | DOI: | 10.1002/adma.201600278 | Rights: | © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adma.201600278]. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | MSE Journal Articles |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Layer Engineering of 2D Semiconductor Junctions.pdf | 3.04 MB | Adobe PDF |  View/Open |
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