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Title: Significant enhancement of UV emission in ZnO nanorods subject to Ga+ ion beam irradiation
Authors: Yadian, Boluo
Chen, Rui
Liu, Hai
Sun, Handong
Liu, Qing
Gan, Chee Lip
Kun, Zhou
Zhao, Chunwang
Zhu, Bin
Huang, Yizhong
Keywords: ZnO nanorods
Photoluminescence enhancement
Issue Date: 2015
Source: Yadian, B., Chen, R., Liu, H., Sun, H., Liu, Q., Gan, C. L., et al. (2015). Significant enhancement of UV emission in ZnO nanorods subject to Ga+ ion beam irradiation. Nano Research, 8(6), 1857-1864.
Series/Report no.: Nano Research
Abstract: Applications of ZnO nanomaterials in optoelectronics are still limited due to their insufficient photoluminescence efficiency. In order to optimize the photoluminescence properties of ZnO nanorods, the UV emission of vertically aligned ZnO nanorods grown on a Si substrate, in correlation with Ga+ ion irradiation at different ion energies (0.5 keV–16 keV), was investigated in the present study. We found that the UV intensity increased rapidly with increasing Ga+ ion energy, up to its maximum around 2 keV, at which point the intensity was approximately 50 times higher than that produced by as-grown ZnO nanorods. The gentle bombardment of low-energy Ga+ ions removes defects from ZnO nanorod surfaces. The Ga+ ions, on the other hand, implant into the nanorods, resulting in compressive strain. It is believed that the perfect arrangement of the crystal lattice upon removal of surface defects and the introduction of compressive strain are two factors that contribute to the significant enhancement of UV light generation.
ISSN: 1998-0124
DOI: 10.1007/s12274-014-0693-7
Schools: School of Physical and Mathematical Sciences 
School of Materials Science & Engineering 
School of Mechanical and Aerospace Engineering 
Rights: © 2015 Tsinghua University Press and Springer-Verlag Berlin Heidelberg. This is the author created version of a work that has been peer reviewed and accepted for publication by Nano Research, Tsinghua University Press and Springer-Verlag Berlin Heidelberg. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
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