Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83557
Title: A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure
Authors: Li, Hua Kai
Chen, Tupei
Liu, P.
Hu, S. G.
Liu, Y.
Zhang, Qing
Lee, Pooi See
Keywords: Ultraviolet light
Synapses
Issue Date: 2016
Source: Li, H. K., Chen, T., Liu, P., Hu, S. G., Liu, Y., Zhang, Q., et al. (2016). A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure. Journal of Applied Physics, 119(24), 244505-.
Series/Report no.: Journal of Applied Physics
Abstract: In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.
URI: https://hdl.handle.net/10356/83557
http://hdl.handle.net/10220/42674
ISSN: 0021-8979
DOI: 10.1063/1.4955042
Rights: © 2016 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4955042]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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