Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83584
Title: Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics
Authors: Li, Wei
Anantha, P.
Bao, Shuyu
Lee, Kwang Hong
Guo, Xin
Hu, Ting
Zhang, Lin
Wang, Hong
Soref, Richard
Tan, Chuan Seng
Keywords: Germanium
Photonics
Issue Date: 2016
Source: Li, W., Anantha, P., Bao, S., Lee, K. H., Guo, X., Hu, T., et al. (2016). Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics. Applied Physics Letters, 109(24), 241101-.
Series/Report no.: Applied Physics Letters
Abstract: A germanium-based platform with a large core-clad index contrast, germanium-on-silicon nitride waveguide, is demonstrated at mid-infrared wavelength. Simulations are performed to verify the feasibility of this structure. This structure is realized by first bonding a silicon-nitride-deposited germanium-on-silicon donor wafer onto a silicon substrate wafer, followed by the layer transfer approach to obtain germanium-on-silicon nitride structure, which is scalable to all wafer sizes. The misfit dislocations which initially form along the interface between germanium/silicon can be removed by chemical mechanical polishing after layer transfer process resulting in a high-quality germanium layer. At the mid-infrared wavelength of 3.8 μm, the germanium-on-silicon nitride waveguide has a propagation loss of 3.35 ± 0.5 dB/cm and a bend loss of 0.14 ± 0.01 dB/bend for a radius of 5 μm for the transverse-electric mode.
URI: https://hdl.handle.net/10356/83584
http://hdl.handle.net/10220/42665
ISSN: 0003-6951
DOI: 10.1063/1.4972183
Rights: © 2016 American Institute of Physics (AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4972183]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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