Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83584
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dc.contributor.authorLi, Weien
dc.contributor.authorAnantha, P.en
dc.contributor.authorBao, Shuyuen
dc.contributor.authorLee, Kwang Hongen
dc.contributor.authorGuo, Xinen
dc.contributor.authorHu, Tingen
dc.contributor.authorZhang, Linen
dc.contributor.authorWang, Hongen
dc.contributor.authorSoref, Richarden
dc.contributor.authorTan, Chuan Sengen
dc.date.accessioned2017-06-13T05:00:40Zen
dc.date.accessioned2019-12-06T15:26:09Z-
dc.date.available2017-06-13T05:00:40Zen
dc.date.available2019-12-06T15:26:09Z-
dc.date.issued2016en
dc.identifier.citationLi, W., Anantha, P., Bao, S., Lee, K. H., Guo, X., Hu, T., et al. (2016). Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics. Applied Physics Letters, 109(24), 241101-.en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/83584-
dc.description.abstractA germanium-based platform with a large core-clad index contrast, germanium-on-silicon nitride waveguide, is demonstrated at mid-infrared wavelength. Simulations are performed to verify the feasibility of this structure. This structure is realized by first bonding a silicon-nitride-deposited germanium-on-silicon donor wafer onto a silicon substrate wafer, followed by the layer transfer approach to obtain germanium-on-silicon nitride structure, which is scalable to all wafer sizes. The misfit dislocations which initially form along the interface between germanium/silicon can be removed by chemical mechanical polishing after layer transfer process resulting in a high-quality germanium layer. At the mid-infrared wavelength of 3.8 μm, the germanium-on-silicon nitride waveguide has a propagation loss of 3.35 ± 0.5 dB/cm and a bend loss of 0.14 ± 0.01 dB/bend for a radius of 5 μm for the transverse-electric mode.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent5 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.rights© 2016 American Institute of Physics (AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4972183]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectGermaniumen
dc.subjectPhotonicsen
dc.titleGermanium-on-silicon nitride waveguides for mid-infrared integrated photonicsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1063/1.4972183en
dc.description.versionPublished versionen
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