Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83585
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dc.contributor.authorDalapati, Goutam Kumaren
dc.contributor.authorZhuk, Siarheien
dc.contributor.authorMasudy-Panah, Saeiden
dc.contributor.authorKushwaha, Ajayen
dc.contributor.authorSeng, Hwee Lengen
dc.contributor.authorChellappan, Vijilaen
dc.contributor.authorSuresh, Vigneshen
dc.contributor.authorSu, Zhenghuaen
dc.contributor.authorBatabyal, Sudip Kumaren
dc.contributor.authorTan, Cheng Chehen
dc.contributor.authorGuchhait, Asimen
dc.contributor.authorWong, Lydia Helenaen
dc.contributor.authorWong, Terence Kin Shunen
dc.contributor.authorTripathy, Sudhiranjanen
dc.date.accessioned2017-06-12T08:30:56Zen
dc.date.accessioned2019-12-06T15:26:10Z-
dc.date.available2017-06-12T08:30:56Zen
dc.date.available2019-12-06T15:26:10Z-
dc.date.issued2017en
dc.identifier.citationDalapati, G. K., Zhuk, S., Masudy-Panah, S., Kushwaha, A., Seng, H. L., Chellappan, V., et al. (2017). Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells. Scientific Reports, 7, 1350-.en
dc.identifier.issn2045-2322en
dc.identifier.urihttps://hdl.handle.net/10356/83585-
dc.description.abstractWe have investigated the impact of Cu2ZnSnS4-Molybdenum (Mo) interface quality on the performance of sputter-grown Cu2ZnSnS4 (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoSx) interfacial layer is observed in sputter grown CZTS films after sulphurization. Thickness of MoSx layer is found ~142 nm when CZTS layer (550 nm thick) is sulphurized at 600 °C. Thickness of MoSx layer significantly increased to ~240 nm in case of thicker CZTS layer (650 nm) under similar sulphurization condition. We also observe that high temperature (600 °C) annealing suppress the elemental impurities (Cu, Zn, Sn) at interfacial layer. The amount of out-diffused Mo significantly varies with the change in sulphurization temperature. The out-diffused Mo into CZTS layer and reconstructed interfacial layer remarkably decreases series resistance and increases shunt resistance of the solar cell. The overall efficiency of the solar cell is improved by nearly five times when 600 °C sulphurized CZTS layer is applied in place of 500 °C sulphurized layer. Molybdenum and sulphur diffusion reconstruct the interface layer during heat treatment and play the major role in charge carrier dynamics of a photovoltaic device.en
dc.format.extent12 p.en
dc.language.isoenen
dc.relation.ispartofseriesScientific Reportsen
dc.rights© 2017 The Author(s) (Nature Publishing Group). This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.subjectSolar cellsen
dc.subjectMolybdenumen
dc.titleImpact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cellsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.researchEnergy Research Institute @ NTU (ERI@N)en
dc.identifier.doi10.1038/s41598-017-01605-7en
dc.description.versionPublished versionen
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