Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83589
Title: Nanoscale current spreading analysis in solution-processed graphene oxide/silver nanowire transparent electrodes via conductive atomic force microscopy
Authors: Shaw, Joseph E.
Perumal, Ajay
Bradley, Donal D. C.
Stavrinou, Paul N.
Anthopoulos, Thomas D.
Keywords: Electrodes
Electrical resistivity
Issue Date: 2016
Source: Shaw, J. E., Perumal, A., Bradley, D. D. C., Stavrinou, P. N., & Anthopoulos, T. D. (2016). Nanoscale current spreading analysis in solution-processed graphene oxide/silver nanowire transparent electrodes via conductive atomic force microscopy. Journal of Applied Physics, 119(19), 195501-.
Series/Report no.: Journal of Applied Physics
Abstract: We use conductive atomic force microscopy (CAFM) to study the origin of long-range conductivity in model transparent conductive electrodes composed of networks of reduced graphene oxide (rGOX) and silver nanowires (AgNWs), with nanoscale spatial resolution. Pristine networks of rGOX (1–3 monolayers-thick) and AgNWs exhibit sheet resistances of ∼100–1000 kΩ/□ and 100–900 Ω/□, respectively. When the materials are deposited sequentially to form bilayer rGOX/AgNW electrodes and thermally annealed at 200 °C, the sheet resistance reduces by up to 36% as compared to pristine AgNW networks. CAFM was used to analyze the current spreading in both systems in order to identify the nanoscale phenomena responsible for this effect. For rGOX networks, the low intra-flake conductivity and the inter-flake contact resistance is found to dominate the macroscopic sheet resistance, while for AgNW networks the latter is determined by the density of the inter-AgNW junctions and their associated resistance. In the case of the bilayer rGOX/AgNWs' networks, rGOX flakes are found to form conductive “bridges” between AgNWs. We show that these additional nanoscopic electrical connections are responsible for the enhanced macroscopic conductivity of the bilayer rGOX/AgNW electrodes. Finally, the critical role of thermal annealing on the formation of these nanoscopic connections is discussed.
URI: https://hdl.handle.net/10356/83589
http://hdl.handle.net/10220/42694
ISSN: 0021-8979
DOI: 10.1063/1.4949502
Schools: School of Electrical and Electronic Engineering 
Research Centres: LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays 
Rights: © 2016 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4949502]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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