Please use this identifier to cite or link to this item:
|Title:||Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition||Authors:||Wu, Dan
|Issue Date:||2016||Source:||Wu, D., Tang, X., Wang, K., Olivier, A., & Li, X. (2016). Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition. Journal of Applied Physics, 119(9), 094305-.||Series/Report no.:||Journal of Applied Physics||Abstract:||After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and Au catalyst size. 40 nm induced GaAs NWs are observed with zinc-blende structure. Based on vapor-liquid-solid mechanism, a kinetic model is used to deepen our understanding of the incorporation of growth species and the role of various growth parameters in tuning the GaAs NW growth rate. Thermally activated behavior has been investigated by variation of growth temperature. Activation energies of 40 nm Au catalyst induced NWs are calculated at different trimethylgallium (TMGa) molar flow rates about 65 kJ/mol. The GaAs NWs growth rates increase with TMGa molar flow rates whereas the growth rates are almost independent of growth time. Due to Gibbs-Thomson effect, the GaAs NW growth rates increase with Au nanoparticle size at different temperatures. Critical radius is calculated as 2.14 nm at the growth condition of 430 °C and 1.36 μmol/s TMGa flow rate. It is also proved experimentally that Au nanoparticle below the critical radius such as 2 nm cannot initiate the growth of NWs on ITO. This theoretical and experimental growth parameters investigation enables great controllability over GaAs NWs grown on transparent conductive substrate where the methodology can be expanded to other III–V material NWs and is critical for potential hybrid solar cell application.||URI:||https://hdl.handle.net/10356/83610
|ISSN:||0021-8979||DOI:||10.1063/1.4942864||Rights:||© 2016 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4942864]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
Files in This Item:
|Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition.pdf||1.82 MB||Adobe PDF|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.