Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83623
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dc.contributor.authorJia, Bo Wenen
dc.contributor.authorTan, Kian Huaen
dc.contributor.authorLoke, Wan Khaien
dc.contributor.authorWicaksono, Satrioen
dc.contributor.authorYoon, Soon Fatten
dc.date.accessioned2017-06-14T03:16:02Zen
dc.date.accessioned2019-12-06T15:26:58Z-
dc.date.available2017-06-14T03:16:02Zen
dc.date.available2019-12-06T15:26:58Z-
dc.date.issued2016en
dc.identifier.citationJia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2016). Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange. Journal of Applied Physics, 120(3), 035301-.en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://hdl.handle.net/10356/83623-
dc.description.abstractThe relationship between growth temperature and the formation of periodic interfacial misfit (IMF) dislocations via the anion exchange process in InSb/GaAs heteroepitaxy was systematically investigated. The microstructural and electrical properties of the epitaxial layer were characterized using atomic force microscope, high-resolution x-ray diffraction, transmission electron microscopy, and Hall resistance measurement. The formation of interfacial misfit (IMF) dislocation arrays depended on growth temperature. A uniformly distributed IMF array was found in a sample grown at 310 °C, which also exhibited the lowest threading dislocation density. The analysis suggested that an incomplete As-for-Sb anion exchange process impeded the formation of IMF on sample grown above 310 °C. At growth temperature below 310 °C, island coalescence led to the formation of 60° dislocations and the disruption of periodic IMF array. All samples showed higher electron mobility at 300 K than at 77 K.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent8 p.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.rights© 2016 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4958863]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectCarrier mobilityen
dc.subjectIII-V semiconductorsen
dc.titleFormation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchangeen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1063/1.4958863en
dc.description.versionPublished versionen
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item.grantfulltextopen-
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