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Title: Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange
Authors: Jia, Bo Wen
Tan, Kian Hua
Loke, Wan Khai
Wicaksono, Satrio
Yoon, Soon Fatt
Keywords: Carrier mobility
III-V semiconductors
Issue Date: 2016
Source: Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2016). Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange. Journal of Applied Physics, 120(3), 035301-.
Series/Report no.: Journal of Applied Physics
Abstract: The relationship between growth temperature and the formation of periodic interfacial misfit (IMF) dislocations via the anion exchange process in InSb/GaAs heteroepitaxy was systematically investigated. The microstructural and electrical properties of the epitaxial layer were characterized using atomic force microscope, high-resolution x-ray diffraction, transmission electron microscopy, and Hall resistance measurement. The formation of interfacial misfit (IMF) dislocation arrays depended on growth temperature. A uniformly distributed IMF array was found in a sample grown at 310 °C, which also exhibited the lowest threading dislocation density. The analysis suggested that an incomplete As-for-Sb anion exchange process impeded the formation of IMF on sample grown above 310 °C. At growth temperature below 310 °C, island coalescence led to the formation of 60° dislocations and the disruption of periodic IMF array. All samples showed higher electron mobility at 300 K than at 77 K.
ISSN: 0021-8979
DOI: 10.1063/1.4958863
Schools: School of Electrical and Electronic Engineering 
Rights: © 2016 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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