Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83724
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dc.contributor.authorWang, Zongruien
dc.contributor.authorDong, Huanlien
dc.contributor.authorZou, Yeen
dc.contributor.authorZhao, Qiangen
dc.contributor.authorTan, Jiahuien
dc.contributor.authorLiu, Jieen
dc.contributor.authorLu, Xiuqiangen
dc.contributor.authorXiao, Jinchongen
dc.contributor.authorZhang, Qichunen
dc.contributor.authorHu, Wenpingen
dc.date.accessioned2017-06-29T07:25:02Zen
dc.date.accessioned2019-12-06T15:30:42Z-
dc.date.available2017-06-29T07:25:02Zen
dc.date.available2019-12-06T15:30:42Z-
dc.date.issued2016en
dc.identifier.citationWang, Z., Dong, H., Zou, Y., Zhao, Q., Tan, J., Liu, J., et al. (2016). Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors. ACS Applied Materials & Interfaces, 8(12), 7919-7927.en
dc.identifier.issn1944-8244en
dc.identifier.urihttps://hdl.handle.net/10356/83724-
dc.description.abstractPoor charge injection and transport at the electrode/semiconductor contacts has been so far a severe performance hurdle for bottom-contact bottom-gate (BCBG) organic field-effect transistors (OFETs). Here, we have developed a simple, economic, and effective method to improve the carrier injection efficiency and obtained high-performance devices with low cost and widely used source/drain (S/D) electrodes (Ag/Cu). Through the simple electrode etching process, the work function of the electrodes is more aligned with the semiconductors, which reduces the energy barrier and facilitates the charge injection. Besides, the formation of the thinned electrode edge with desirable micro/nanostructures not only leads to the enlarged contact side area beneficial for the carrier injection but also is in favor of the molecular self-organization for continuous crystal growth at the contact/active channel interface, which is better for the charge injection and transport. These effects give rise to the great reduction of contact resistance and the amazing improvement of the low-cost bottom-contact configuration OFETs performance.en
dc.format.extent43 p.en
dc.language.isoenen
dc.relation.ispartofseriesACS Applied Materials & Interfacesen
dc.rights© 2016 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ACS Applied Materials & Interfaces, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/acsami.5b12307].en
dc.subjectBottom-contact Organic Field-effect Transistoren
dc.subjectContact Resistanceen
dc.titleSoft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistorsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1021/acsami.5b12307en
dc.description.versionAccepted versionen
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item.grantfulltextopen-
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