Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/83836
Title: Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity
Authors: Kim, Munho
Huang, Hsien-Chih
Kim, Jeong Dong
Chabak, Kelson D.
Kalapala, Akhil Raj Kumar
Zhou, Weidong
Li, Xiuling
Keywords: Photodiodes
Semiconductors
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Kim, M., Huang, H.-C., Kim, J. D., Chabak, K. D., Kalapala, A. R. K., Zhou, W., & Li, X. (2018). Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity. Applied Physics Letters, 113(22), 222104-. doi:10.1063/1.5053219
Series/Report no.: Applied Physics Letters
Abstract: β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has been demonstrated for efficient light management in β-Ga2O3 optoelectronic applications yet. We hereby present nanoscale groove textured β-Ga2O3 metal-semiconductor-metal photodiodes, enabled by the unique metal-assisted chemical etching (MacEtch) method at room temperature in liquid. Although the textured surface stoichiometry shows ∼10% oxygen deficiency which results in a reduced Schottky barrier height and increased dark current, clear enhancement of the responsivity is demonstrated, compared to the planar untreated surface. The realization of MacEtch's applicability to β-Ga2O3 opens the door for producing more sophisticated device structures for this material, without resorting to conventional dry etch and potential damage.
URI: https://hdl.handle.net/10356/83836
http://hdl.handle.net/10220/49130
ISSN: 0003-6951
DOI: 10.1063/1.5053219
Rights: © 2018 The Author(s). All rights reserved. This paper was published by AIP in Applied Physics Letters and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

SCOPUSTM   
Citations 20

9
checked on Aug 31, 2020

WEB OF SCIENCETM
Citations 50

13
checked on Oct 19, 2020

Page view(s) 50

31
checked on Oct 21, 2020

Download(s) 50

17
checked on Oct 21, 2020

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.