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|Title:||Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field||Authors:||Sheremet, A. S.
Kibis, O. V.
Kavokin, A. V.
Shelykh, I. A.
|Issue Date:||2016||Source:||Sheremet, A. S., Kibis, O. V., Kavokin, A. V., & Shelykh, I. A. (2016). Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field. Physical Review B, 93, 165307-.||Series/Report no.:||Physical Review B||Abstract:||We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). Solving the Schrödinger problem for dressed electrons, we demonstrated that the field drastically modifies the spin transport. In particular, the dressing field leads to renormalization of spin-orbit coupling constants that varies conductivity of the spin transistor. The present effect paves the way for controlling the spin-polarized electron transport with light in prospective spin-optronic devices.||URI:||https://hdl.handle.net/10356/83875
|ISSN:||2469-9950||DOI:||10.1103/PhysRevB.93.165307||Rights:||© 2016 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of 2016 American Physical Society. The published version is available at: [http://dx.doi.org/10.1103/PhysRevB.93.165307]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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